| PART |
Description |
Maker |
| PMG370XN |
N-channel uTrenchmos (tm) extremely low level FET
N-channel mTrenchMOS extremely low level FET
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| PMN23UN |
UTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PMZ760SN |
PMZ760SN; uTrenchMOS (tm) standard level FET
uTrenchMOS (tm) standard level FET uTrenchMOSTM）的标准水平场效应管
|
Philips
ST Microelectronics
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| STP12N50M2 |
Extremely low gate charge
|
STMicroelectronics
|
| PMWD26UN |
Dual N-channel uTrenchMOS ultra low level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| LPW-551202F LPW-551202G LPW-551202H LPW-551202J LP |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| STB28N60DM2 |
Extremely low gate charge and input capacitance
|
STMicroelectronics
|
